Arbeitskreis Modellierung von Systemen und Parameterextraktion 
Modeling of Systems and Parameter Extraction Working Group
5th Sino MOS-AK Workshop Xi'an
August 11-13, 2021
Open Directory
MOS-AK: Enabling Compact Modeling R&D Exchange
感谢以下赞 助商对MOS-AK 支持(不分先后)
cogenda Sino_Microtech
Empyrean UESTC Primarius
MOS-AK Workshop Organizers
Uni_Xidian xmod
Final MOS-AK Workshop Program
Important Announcement: MOS-AK highest priority is to protect the public health. Due to very recent COVID-19 regulations everyone is now expected to act responsibly. In that an international ‘extraordinary situation’, Local MOS-AK Organizers and TPC Members have decide to rescheduled to planned MOS-AK Xi‘an workshop to Summer 2021 
  • Call for Papers - March.2021
  • 2nd Announcement - April 2021
  • Final Workshop Program - July 2021
  • MOS-AK Workshop - August 11-13, 2021
    Day 1: GaN RF/Microwave Technology, and Device Modeling with ASM-HEMT Model Training Course
    Day 2-3: MOS-AK Workshop
Hybrid event at Xidian University <>
会议场所:西安电子科技大学北校区阶梯教学楼112报告厅, 西安市雁塔区太白南路2号西安电子科技大学(北校区)
No.2, South Taibai Road, Xian Dianzi University, Xi’an , 710071
Online Registration is open
Workshop Secretary: Meng Zhang Mobile:13619295980
any related enquiries can be sent to

MOS-AK Workshop Agenda
11th August  MOS-AK Day 1
Chair: TBA
9:00-11:30  Part 1: GaN RF/Microwave Device Technology
Dr. Sourabh Khandelwal
Macquarie University
13:30-16:00  Part 2: GaN Non-linear Device Modeling with ASM-HEMT
Dr. Sourabh Khandelwal
Macquarie University

12th.August  MOS-AK Day 2
Chair: TBA
9:30-9:35   Welcome and Open Speech
XiaoHua Ma
Xidian University
9:35-9:40  MOS-AK Review & Outlook
Min Zhang;  XMOD Technologies (CN)
W.Grabinski; MOS-AK (EU)
9:40-10:25  Compact Transistor Model Parameter Extraction: Chanllenges and Directions (invited talk)
Zhihong Liu
Primarius Technologies,Co., Ltd.
10:25-10:50  An open-source Verilog-A complier and test suites for device modeling
Chen Shen
Cogenda Pte. Ltd.
10:50-11:05  Tea break
11:05-11:30  Knowledge-based neural compact modeling towards autonomous technology development
Soogine Chong
Alsemy Inc.
11:40-12:00  Group photo
12:00-13:30  Lunch
13:30-14:00  Nonliner behavioral model and double pulse technqiue in GaN Application
Sihua Ouyang & Yang Zhou
Sino Microtech (Beijing) Ltd.
14:00-14:25  Surface Potential Based Model for p-GaN HEMT with Schottky Gate
Sheng Li
Southeast University
14:25-15:10  Impact of Extended Defects on the yield and Performance of 4H-SiC Power Devices (invited talk)
Holger Schlichting
Fraunhofer Institute for Integrated Systems and Device Technology IISB
15:10-15:25  Tea break
15:25:15:50  A Firefly-Algorithm-Based Parameter Extraction Routine for Eleven-ParameterModel of Perovskite Solar Cells
Jingxian Liu
Jinan University
15:50-16:15  An Analytic Potential Compact Model of a-IGZO TFT with Dual Material Gate Structure
ShiJie Huang
Institute of Microelectronics of the Chinese Academy of Sciences
16:15-17:00  Substrate RF non-linear characterization and modeling (invited talk)
Martin Rack
University Catholique de Louvain, UCLouvain
17:00-17:25  IV characteristics of SiC Power MOSFETs in the high voltage saturation region (invited talk)
Cristino Salcines
University of Stuttgart
18:00-20:00  Gala dinner
13th.August  MOS-AK Day 3
Chair: TBA
9:30-10:15  Leakage and Interface Issues in GaN-based HEMTs (invited talk)
JieJie Zhu
Xidian University
10:15-10:40  Modeling the linearity of III-V semiconductor RF transistors
Lei Huang
University of Electronic Science and Technology of China
10:40-11:00  Tea break
11:00-11:25  An accurate gate current model for GAN switch HEMT under forward and Reverse gate voltage
Zhi Fu Hu
Hebei Semiconductor Research Institute
11:25-11:50  Nonlinear Capacitance Modeling for Large-Signal GaN HEMT Model
Haorui Luo
National University of Singapore
12:00-13:30  Lunch
13:30-14:15  Material Growth and Material Characterization for Conventional & Nanoelectronic Devices Applications: An Innovative Prospective (invited talk)
Praveen Kumar Saxena
14:15:14:40  Performance analysis and modeling of 22nm FDSOI MOSFETs
Jin Chen
Shanghai Institute of Microsystem and Information Technology
14:40-15:05  Random Telegraph Noise (RTN) Model and Simulation
Dehuang Wu
Synopsys (Shanghai) Co.,Ltd.
15:05-15:25  Study of the Bipolar Amplification Effect in FDSOI Caused by Heavy Ion Strike
Kewei Wang
Institute of Microelectronics of the Chinese Academy of Sciences
15:25:15:40  Tea break
15:40-16:25  Toward reliability-aware physics-based FET compact models (invited talk)
Ben Kaczer
Interuniversity Microelectronics Centre, IMEC
16:25-17:10  Characterization and Modeling of AlGaN/GaN Trapping Transients (invited talk)
Jose C. Pedro
University of Aveiro
17:10-17:25  MOS-AK 2022 Annoucement
Min Zhang; 
XMOD Technologies (CN) W.Grabinski; MOS-AK (EU)
End of the MOS-AK Xian Workshop
Xian MOS-AK Compact Modeling Committee
  Advisory Committee:
Yue Hao,  Xidian University
Jose Pedro, T-MTT Editor
Yogesh Chauhan, T-ED Editor

General  Chairs:
Xiaohua Ma, Xidian University
Xuefeng Zheng, Xidian University
Wladek Grabinski, MOS-AK

International R&D Adviser :
Min Zhang, xmod Technologies 

Technical Program Committee  (random order):
Bertrand Ardouin, Serma Group
Fujiang Lin, USTC
Franz Sischka, Sisconsult
Hongtao Xu, Fudan University
Jianjun Gao, ECNU
Kai Kang, UESTC
KaiKai Xu, UESTC
Lingling Sun, HangZhou Dianzi University
Mansun Chan, HKUST
Ruimin Xu, UESTC
Shujun Cai, CETC 13
Sadayuki Yoshitomi, Kioxa
Tangsheng Chen, CETC 55
Xiaohua Ma, Xidian University
Xing Zhou, NTU, Singapore
Yan Wang, Tsinghua University
Ling Yang, Xidian University
Organizing Committee:

Finance Chair:
Qing Zhu, Xidian University

Tutorial Chairs:
Yuehang Xu, UESTC
Yang Lu, Xidian University

Publication Chairs:
Wladek Grabinski, MOS-AK
Yuehang Xu, UESTC

Awards Committee Chairs:
Yongxin Guo, NUS
Jun Liu, Hangzhou Dianzi University

Sponsorship Chair:
Yingzhe Wang, Xidian University

Exhibition Chairs:
Mei Wu, Xidian University

Local Arrangements Chair:
JieJie Zhu, Xidian University

Min Xie, Xidian University
update: JULY'21 (rev. f)
Contents subject to change (c)1999-2021 All rights reserved. WG