Arbeitskreis MOS-Modelle und Parameterextraktion
MOS Modeling and Parameter Extraction Group Meeting
organized by W. Grabinski, Motorola
MIXDES, 20-21 June 2002, Wroclaw, Poland
    Plenary Session / Invited Paper
B. Iniguez Analytical SOI MOSFET Model Valid for Graded-Channel Devices
    Special Session: MOS Modeling and Modern Mixmode Design 
  W. Grabinski Welcome
X. Zhou Multi-Level Modeling of Deep-Submicron MOSFETs and ULSI Circuits 
C. Lallement High Level Description of Thermodynamical Effects in the EKV2.6 MOST Model
M. Bucher EKV 3.0: an analog design-oriented MOSFET model
D. Foty gm/Id-Based MOSFET Modeling and Modern Analog Design
coffee break
L. Lemaitre Compact Device Modeling Using Verilog-A and ADMS
A. Lord  Advanced Calibration Techniques for On-wafer Microwave Measurements and Characterisation
E. Vandamme Large-Signal Network Analyzer Measurements and their Use in Device Modelling
    Special Session: Interdisciplinary Design: Models and Methods 
J.-M. Sallese Principles of the 1T Dynamic Access Memory Concept on SOI
E. Seebacher MOS Transistor Modeling for HV Processes 
T. Gneiting A Unified Environment for MOS Modeling Inside Agilent's IC-CAP
coffee break
G. Wachutka From Continuous Field Modeling to MEMS Macromodels
W. Dabrowski Multielectrode System for Imaging of Neuronal Activity in Live Retinal Tissues
  L. Golonka Application of LTCC Ceramics in Microwaves 
    Poster Session: SOI Device Modeling
D. Tomaszewski Consistent DC and AC Models of Non-fully Depleted SOI MOSFETs in Strong Inversion
    End of Sessions
Contents subject to change.©2002 All rights reserved. WG