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| The Verilog-A Models for Circuit Simulation repository is a collection of compact models written in Verilog-A with the purpose of simulation of state-of-the-art electronic circuits: |
| asmhemt.va bsim6.1.1.va bsimbulk bsimcmg.va bsimimg.va bsimsoi.va diode_cmc.va ekv26.va ekv3.va |
epfl_hemt.va fbhhbt-2.3.va hicuml0-2.va hicuml2.va hisim2.va hisimhv.va hisimsoi.va l_utsoi_102.va bjt504.va |
bjt505.va mosvar.va mvsg_cmc.va psp102.va psp103.va r2_cmc.va r2_et_cmc.va r3_cmc.va vbic_1p3.va |
| The repository is maintaned by Dietmar Warning. Other compact/Verilog-A models are also listed below: |
| ACM | Advanced Compact MOSFET |
| The ACM (Advanced Compact MOSFET) model is a charge-based physical model. All the large-signal characteristics (currents and charges) and the small-signal parameters transconductances and transcapacitances are given by single-piece expressions with infinite order of continuity for all regions of operation. | |
| Web |
http://eel.ufsc.br/~lci/acm/introduction.html |
| Code |
http://eel.ufsc.br/~lci/acm/download.html |
| Verilog-A |
No |
| Simulator |
other |
| References |
[1] C. Galup-Montoro and M. C. Schneider, MOSFET Modeling for Circuit Analysis and Design, World Scientific, Singapore, 2007. |
| Angelov GaAs | industry-standard compact device model for GaAs transistors |
| A general purpose large-signal modeling approach with the Verilog-A implemented in CAD tools and experimentally evaluated. Models show good accuracy and stable behavior also for HB simulations. | |
| Web |
https://document.chalmers.se/workspaces/chalmers/mikroteknologi-och/iltcho-angelowdocuments/ openfolder |
| Code |
http://www.tiburon-da.com/design_kits/Angelov_DK_v1_12_OA.zip |
| Verilog-A |
Yes |
| Simulator |
ADS |
| References |
Ilcho Angelov, Roberto Tinti; Accurate Modeling of GaAs & GaN HEMT's for Nonlinear Applications; EDA Webcast, May 7 2013 |
| Angelov GaN | industry-standard compact device model for GaN transistors |
| Angelov-GaN is an industry-standard compact device model for GaN semiconductor devices. Since GaN devices typically operate at high power, it is important to be able to model thermal issues and their impacts on device characteristics. Prof. I. Angelov at Chalmers University of Technology developed his Angelov-GaN model as an alternative. | |
| Web |
|
| Code |
http://www.tiburon-da.com/design_kits/Angelov_DK_v1_12_OA.zip |
| Verilog-A |
Yes |
| Simulator |
ADS |
| References |
Ilcho Angelov; Compact, Equivalent Circuit Models for GaN, SiC, GaAs and CMOS FET; MOS-AK/GSA Workshop Dec.9, 2009 Baltimore |
| BSIM6 | Berkeley Short-channel IGFET Model |
| BSIM6 is the new Bulk MOSFET model from the BSIM Group. The model provides excellent accuracy compared to measured data in all regions of operation. It features model symmetry valued for analog and RF applications while maintaining the strong support and performance of the BSIM model valued for all applications since 1996. The model has been extensively tested by TechAmerica Compact Model Council (CMC) member companies to meet the needs of industrial users. CMC has approved the release of BSIM6.0.0 as an industry-standard MOSFET model. | |
| Web |
http://www-device.eecs.berkeley.edu/bsim/?page=BSIM6 |
| Code |
http://www-device.eecs.berkeley.edu/bsim/static.php?page=BSIM6_LR |
| Verilog-A |
Yes |
| Simulator |
other |
| References |
[1] Recent Enhancements in BSIM6 Bulk MOSFET Model; H.Agarwal (IIT Kanpur), S. Venugopalany, M.-A. Chalkiadakia, N.Paydavosi, J. P. Duarte, S. Agnihotri, C. Yadav, and P. Kushwaha, Y. S. Chauhan (IIT Kanpur), and C. Enz, A. Niknejd, and C. Hu; SISPAD 2013, Glasgow UK |
| EKV 2.6 | EKV Compact MOSFET Model Standard for Analog/RF IC Designs |
| An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications | |
| Web |
http://ekv.epfl.ch |
| Code |
https://github.com/ekv26/model |
| Verilog-A |
Yes |
| Simulator |
ngspice, Qucs, GnuCap, Xyce |
| References |
[1]
C. Enz, F. Krummenacher, E. Vittoz, 'An analytical MOS transistor model
valid in all regions of operation and dedicated to low-voltage and
low-current applications', Journal on Analog Integrated Circuits and
Signal Processing, Kluwer Academic Publishers, pp. 83-114, July 1995 [2] M. Bucher, 'Analytical MOS Transistor Modelling for Analog Circuit Simulation', Ph.D. Thesis No. 2114 (1999), Swiss Federal Institute of Technology, Lausanne (EPFL). |
| EKV3 | EKV3 MOSFET model in Verilog-A |
| The code is developed and maintained by EKV3 modeling group at Technical University of Crete (TUC). | |
| Web |
https://github.com/MatBucher/ekv3model/tree/main |
| Code |
https://github.com/MatBucher/ekv3model/tree/main/code |
| Verilog-A |
Yes |
| Simulator |
ngspice, Qucs, GnuCap, Xyce |
| References |
Current contributors: Matthias Bucher, Nikolaos Makris Past contributors: Antonios Bazigos, Marianna Chalkiadaki, Nikolaos Mavredakis, Francois Krummenacher, Jean-Michel Sallese, Christian Enz, Ananda Roy |
| HICUM | HIgh CUrrent Model |
| HICUM stands for HIgh CUrrent Model and targets the design of bipolar transistor circuits at high-frequencies and high-current densities using Si, SiGe or III-V based processes. HICUM is being developed and maintained by the HICUM Group at CEDIC, University of Technology Dresden, Germany, and the University of California at San Diego, USA. Presently three hierarchy (levels) of HICUM models (e.g., Level0, Level2 and Level4) exist differing by model complexity and each targeting a different design purpose. | |
| Web |
http://www.iee.et.tu-dresden.de/iee/eb/hic_new/hic_intro.html |
| Code |
http://www.iee.et.tu-dresden.de/iee/eb/hic_new/hic_source.html |
| Verilog-A |
Yes |
| Simulator |
other |
| References |
[1] M. Schröter, A. Chakravorty "Compact Hierarchical Bipolar Transistor Modeling with HiCUM" 752pp; Nov 2010 ISBN: 978-981-4273-21-3 (hardcover) |
| HiSIM2 | Surface-Potential-Based RF MOSFET Model for Circuit Simulation |
| Standardization of HiSIM2 and release of HiSIM251 as 1st standard version on April 2011�€€ | |
| Web |
http://www.hisim.hiroshima-u.ac.jp/ |
| Code |
http://home.hiroshima-u.ac.jp/usdl/HiSIM2/HiSIM2_pub.html |
| Verilog-A |
Yes |
| Simulator |
other |
| References |
[1]
Mitiko Miura-Mattausch; Hans Jürgen Mattausch; Tatsuya Ezaki; The
physics and modeling of MOSFETS: surface-potential model HiSIM; New
Jersey; World Scientific, cop. 2008 [2] N. Sadachika, S. Mimura, A. Yumisaki, K. Johguchi, A. Kaya, M. Miura-Mattausch, and H. J. Mattausch, "Prediction of Circuit-Performance Variations from Technology Variations for Reliable sub-100nm SOC Circuit Design", IEICE Trans. on Electronics, Vol. E94-C, No. 3, 361-367 (2011.3) |
| MEMS Switch | large-signal model for a ohmic cantilever RF MEMS switch |
| The Verilog-A large signal model can be used for operating point, small signal (AC, SP) and large signal (HB, PSS, QPSS) simulations, using ADS, SpectreRF or Qucs. It includes large-signal electromechanical effects, as well as small-signal Brownian and Johnson-Nyquist noise. It does not include electro-thermal effects yet. | |
| Web |
http://www-personal.umich.edu/~vcaeken |
| Code |
http://www.designers-guide.org/VerilogAMS/mems-models/OHMIC_CANTILEVER_RF_MEMS_SWITCH.va |
| Verilog-A |
Yes |
| Simulator |
other |
| References |
[1] K. Van Caekenberghe, "Modeling RF MEMS Devices", IEEE Microwave Magazine, vol. 13, no. 1, pp. 83-110, Jan.-Feb. 2012 |
| MEXTRAM | compact model for bipolar transistors |
| Mextram is a compact model for bipolar transistors: it supports the design of bipolar transistor circuits in silicon (Si) and silicon-germanium (SiGe) based process technologies. Mextram is developed and supported at Delft University of Technology. Mextram has been selected by the Compact Model Council (CMC) as a world standard bipolar transistor compact model for the semiconductor industry. | |
| Web |
http://mextram.ewi.tudelft.nl/ |
| Code |
http://mextram.ewi.tudelft.nl/page_Releases.504.php |
| Verilog-A |
Yes |
| Simulator |
other |
| References |
[1] "Mextram" by R. van der Toorn, J.C.J. Paasschens, W.J. Kloosterman and H.C. de Graaff; Chapter 7 (pp. 199 - 227) of: Compact Modeling, Principles, Techniques and Applications, Gildenblat, Gennady (ed.), Springer, New-York, 2010. |
| PSP | Compact Model for bulk Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET's) |
| PSP is a surface-potential based MOS Model, containing all relevant physical effects (mobility reduction, velocity saturation, DIBL, gate current, lateral doping gradient effects, STI stress, etc.) to model present-day and upcoming deep-submicron bulk CMOS technologies. PSP not only gives an accurate description of currents, charges, and their first order derivatives (i.e. transconductance, conductance and capacitances), but also of the higher order derivatives, resulting in an accurate description of electrical distortion behavior. The latter is especially important for analog and RF circuit design. The model furthermore gives an accurate description of the noise behavior of MOSFETs. Finally, PSP has an option for simulation of non-quasi-static (NQS) effects. | |
| Web |
http://psp.ewi.tudelft.nl/ |
| Code |
http://psp.ewi.tudelft.nl/page_Releases.103.php |
| Verilog-A |
Yes |
| Simulator |
other |
| References |
[1] Surface-Potential-Based Compact Model of Bulk MOSFET by Gennady Gildenblat, Weimin Wu, Xin Li, Ronald van Langevelde, Andries J. Scholten, Geert D.J. Smit and Dirk B.M. Klaassen. Chapter 1 (pp. 3 - 40) of: Compact Modeling, Principles, Techniques and Applications, Gildenblat, Gennady (ed.), Springer, New-York, 2010. |
| QPZD | Quasi-physical zone division model for RF circuit simulation |
| The QPZD model is a physics-based compact model suitable for compound semiconductor transistors such as GaAs and GaN. The modeling principle of this model involves dividing the transistor channel into multiple characteristic regions and integrating classical semiconductor device physics theories, such as the electric field-electron velocity relationship and the gradual channel approximation, to obtain the constitutive model equations in the intrinsic region. Based on this, key physical parameters are utilized to further consider higher-order dispersion effects, including self-heating and trapping. The QPZD model accurately characterizes the device's nonlinear fundamental/harmonic behavior, intermodulation, noise, and other metrics. | |
| Web |
https://github.com/Terrybookman/Uestc_QPZD-Model-Source-Code |
| Code |
https://github.com/Terrybookman/Uestc_QPZD-Model-Source-Code |
| Verilog-A |
Yes |
| Simulator |
other |
| References |
"[1]
Z. Wen, Y. Xu, Y. Chen, H. Tao, C. Ren, H. Lu, Z. Wang, W. Zheng, B.
Zhang, T. Chen, T. Gao and R. Xu, ""A Quasi-Physical Compact
Large-Signal Model for AlGaN/GaN HEMTs,"" IEEE Transactions on
Microwave Theory and Techniques, vol. 65, no. 12, pp. 5113-5122, Dec.
2017. doi:10.1109/TMTT.2017.2765326 [2] S. Mao, R. Xu, B. Yan and Y. Xu, ""An Improved Noise Modeling Method Using a Quasi-Physical Zone Division Model for AlGaN/GaN HEMTs,"" IEEE Transactions on Electron Devices, vol. 70, no. 4, pp. 1835-1842, April 2023, doi: 10.1109/TED.2023.3249136." |
| VBIC | Vertical Bipolar Intercompany Model |
| VBIC is a bipolar junction transistor (BJT) model that was developed as a public domain replacement for the SPICE Gummel-Poon (SGP) model. VBIC is designed to be as similar as possible to the SGP model, yet overcomes its major deficiencies. VBIC improvements on SGP: Improved Early effect modeling; Quasi-saturation modeling; Parasitic substrate transistor modeling; Parasitic fixed (oxide) capacitance modeling; Includes an avalanche multiplication model; Improved temperature modeling; Base current is decoupled from collector current; Electrothermal modeling; Smooth, continuous model. | |
| Web |
http://www.designers-guide.org/VBIC/ |
| Code |
http://www.designers-guide.org/VBIC/downloads.html |
| Verilog-A |
Yes |
| Simulator |
other |
| References |
[1] Mcandrew, C.C.; Seitchik, J.A.; Bowers, Derek F.; Dunn, M.; Foisy, M.; Getreu, Ian; McSwain, M.; Moinian, S.; Parker, J.; Roulston, D.J.; Schroter, M.; Van Wijnen, P.; Wagner, L.F., "VBIC95, the vertical bipolar inter-company model," Solid-State Circuits, IEEE Journal of , vol.31, no.10, pp.1476,1483, Oct 1996 |
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