Arbeitskreis MOS-Modelle und Parameterextraktion
MOS Modeling and Parameter Extraction Group Meeting
organized by
W. Grabinski, Motorola and B. Lemaitre, Infineon
5 March 2001, Infineon, Munich, Germany
MOS-AK: Enabling Compact Modeling R&D Exchange
Open Directory

10:00 -10:15 Welcome and Call to order
B. Lemaitre and W. Grabinski
  RF MOSFET Modeling
10:15-10:45 NNMS - Characterization and Modeling
D. Schreurs

Non-linear models of microwave devices are commonly based on DC, low-frequency C-V and S-parameter measurements. However, the recent development of new measurement set-ups, which are oriented towards VECTORIAL large-signal characterization, has initiated the development of new techniques to enhance the ease and accuracy of non-linear transistor model validation and extraction. This presentation focuses on the Agilent's Non-linear Network Measurement System (NNMS) and presents an overview of the applicability of this novel  type of measurements to RF MOSFET modelling.
10:45-11:15 RF-CMOS Noise: Modeling and Extraction
G. Knoblinger

Because the performance of typical RF-CMOS applications (LNA, ...) is dominated by the noise performance of the MOS transistors, an exact noise modeling of these devices is very important. A method for the extraction of the noise sources of the MOS transistor (drain current noise, gate noise and correlation coefficient between these two sources) where all additional parasitic noise sources in the small signal equivalent circuit are considered, will be presented. We also will present a new model for the thermal channel noise of deep submicron CMOS transistors.
11:15-11:30 Coffee break
  BSIM4 Model
11:30-12:00 Modeling and Parameter Extraction Experiences with BSIM4
J. Assenmacher

Modeling of halo/pocket implanted MOSFETs, i.e. parameter extraction of drain-induced threshold voltage shift (DITS) and output resistance degradation in long channel devices. Improved modeling of the moderate inversion region and reverse short channel effect (RSCE) for higher body bias. Discussion of the new mobility model. Modeling of quantum-mechanical effect using the intrinsic charge thickness capacitance model (CTM).
12:00-13:30 Lunch
13:30-14:00 Model Parameter Extraction Strategy for the BSIM4 Simulation Model
T. Gneiting

The new BSIM4 simulation model for very deep sub-micron devices from UC Berkeley has roughly 240 parameters. It can be used in a flexible and powerful way to model a large variety of different MOS technologies. This paper demonstrates a methodology to determine the parameters based on the model  equations directly from transistor measurements. New data representations, like Vth=f(L,Temperature, etc.) are generated to concentrate the huge amount of I-V curves of up to 20 measured transistors in a more informative format.
  University activities and WEB teaching
14:00-14:30 Extraction of Compact Model Parameters From Results of 2D Device Simulation
W. Kuzmicz

This talk demonstrates a technique of extraction of parameters of a compact MOS model (BSIM3v3) from the results of process and device simulation. This technique is fast enough to be applicable in statistical (Monte Carlo) process/device/circuit simulation. Application to a real industrial CMOS process is presented and comparison with experimental transistor characteristics provided.
14:30-15:00 Global University of Technology
H. Khakzar

  • Motivation
  • Why? At the right time and space 
  • The enabling Technology
  • Exploding internet 
  • The evolving geopolitical conditions
  • Dialog 'Among Civilizations
  • Our resources
  • 15:00-15:15  Coffee break
      Guest presentation
    15:15-15:30 Introduction of the FSA Fabless Semiconductor Association, Modeling Committee
    D. Foty

    The Fabless Semiconductor Association (FSA) was founded in 1994 to serve as the leading voice and key-enabler for the fabless semiconductor industry. The association began with 40 founding members and has grown to 300 members, whose success can be measured in the dramatic evolution of the attitude toward fabless - from criticized, to respected, to preferred. Today, the fabless-foundry business model represents the most dynamic, advanced, and productive cutting-edge of the North American semiconductor industry. This brief presentation reviews the important aspects of the fabless industry in the United States. It also describes the activities of the Modeling Subcommittee in promoting the quality of models used by fabless companies and in providing general service to the profession in the semiconductor industry.
     15:30-16:00 Organizational topics
    B. Lemaitre and W. Grabinski

    Panel discussion / next meeting planning
  • reduction of meeting frequency or 2 meetings/year ?
  • organization issues
  • special modeling meeting, including new model developments like charge-sheet models, EKV3.0, SP2000?
  • 16:00 Adjourn. End of meeting
      update: 1-Mar-01
    Contents subject to change. ©2001 All rights reserved. WG