| Arbeitskreis MOS-Modelle
und Parameterextraktion MOS Modeling and Parameter Extraction Group Meeting organized by W. Grabinski, Motorola and B. Lemaitre, Infineon 5 March 2001, Infineon, Munich, Germany |
MOS-AK: Enabling Compact Modeling R&D
Exchange
| Calendar |
Open
Directory |
Books |
Mission |
Committee |
|
|
| 10:00 -10:15 | Welcome and
Call to
order B. Lemaitre and W. Grabinski |
| RF MOSFET Modeling | |
| 10:15-10:45 | NNMS
- Characterization and Modeling D. Schreurs |
| Non-linear models of microwave devices are commonly based on DC, low-frequency C-V and S-parameter measurements. However, the recent development of new measurement set-ups, which are oriented towards VECTORIAL large-signal characterization, has initiated the development of new techniques to enhance the ease and accuracy of non-linear transistor model validation and extraction. This presentation focuses on the Agilent's Non-linear Network Measurement System (NNMS) and presents an overview of the applicability of this novel type of measurements to RF MOSFET modelling. | |
| 10:45-11:15 | RF-CMOS
Noise: Modeling and Extraction G. Knoblinger |
| Because the performance of typical RF-CMOS applications (LNA, ...) is dominated by the noise performance of the MOS transistors, an exact noise modeling of these devices is very important. A method for the extraction of the noise sources of the MOS transistor (drain current noise, gate noise and correlation coefficient between these two sources) where all additional parasitic noise sources in the small signal equivalent circuit are considered, will be presented. We also will present a new model for the thermal channel noise of deep submicron CMOS transistors. | |
| 11:15-11:30 | Coffee break |
| BSIM4 Model | |
| 11:30-12:00 | Modeling and Parameter
Extraction Experiences
with BSIM4 J. Assenmacher |
| Modeling of halo/pocket implanted MOSFETs, i.e. parameter extraction of drain-induced threshold voltage shift (DITS) and output resistance degradation in long channel devices. Improved modeling of the moderate inversion region and reverse short channel effect (RSCE) for higher body bias. Discussion of the new mobility model. Modeling of quantum-mechanical effect using the intrinsic charge thickness capacitance model (CTM). | |
| 12:00-13:30 | Lunch |
| 13:30-14:00 | Model
Parameter Extraction Strategy for the BSIM4 Simulation Model T. Gneiting |
| The new BSIM4 simulation model for very deep sub-micron devices from UC Berkeley has roughly 240 parameters. It can be used in a flexible and powerful way to model a large variety of different MOS technologies. This paper demonstrates a methodology to determine the parameters based on the model equations directly from transistor measurements. New data representations, like Vth=f(L,Temperature, etc.) are generated to concentrate the huge amount of I-V curves of up to 20 measured transistors in a more informative format. | |
| University activities and WEB teaching | |
| 14:00-14:30 | Extraction
of Compact Model Parameters From Results of 2D Device Simulation W. Kuzmicz |
| This talk demonstrates a technique of extraction of parameters of a compact MOS model (BSIM3v3) from the results of process and device simulation. This technique is fast enough to be applicable in statistical (Monte Carlo) process/device/circuit simulation. Application to a real industrial CMOS process is presented and comparison with experimental transistor characteristics provided. | |
| 14:30-15:00 | Global
University of Technology H. Khakzar |
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| 15:00-15:15 | Coffee break |
| Guest presentation | |
| 15:15-15:30 | Introduction
of the FSA Fabless Semiconductor Association, Modeling Committee D. Foty |
| The Fabless Semiconductor Association (FSA) was founded in 1994 to serve as the leading voice and key-enabler for the fabless semiconductor industry. The association began with 40 founding members and has grown to 300 members, whose success can be measured in the dramatic evolution of the attitude toward fabless - from criticized, to respected, to preferred. Today, the fabless-foundry business model represents the most dynamic, advanced, and productive cutting-edge of the North American semiconductor industry. This brief presentation reviews the important aspects of the fabless industry in the United States. It also describes the activities of the Modeling Subcommittee in promoting the quality of models used by fabless companies and in providing general service to the profession in the semiconductor industry. | |
| 15:30-16:00 | Organizational
topics B. Lemaitre and W. Grabinski |
| Panel discussion /
next meeting planning
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| 16:00 | Adjourn. End of meeting |
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