IEEE WIE Affinity Group (CH)

Swisstech Convention Centre
Quartier Nord de l'EPFL
Route Louis-Favre 2
CH-1024 Ecublens

Abstract: 
In this paper a closed-form current model for organic TFTs is presented which leads to a charge-based C∞-continuous current model with threshold voltage and slope as model parameters, while still keeping a single expression valid from below to above threshold operation. An empirical power-law mobility model has been incorporated to include the effect of hopping transport. Non-linear contact resistance and channel length modulation effects have been included. Furthermore, from physical parameters given by shallow and deep trap densities the threshold voltage and subthreshold slope of the device can be calculated.

Abstract: 
TBD

Abstract: 
High power Semiconductor devices (e.g., MOSFETs, IGBTs and IGCTs) provide basic building blocks for variety of high power applications such as traction, renewable energy generation system, motor drives, and welding appliances besides energy transmission and distribution networks. For these high power applications, wide bandgap electronic devices using silicon carbide (SiC) and gallium nitride (GaN) material system promise potential replacement to leading horse silicon based devices; thanks to larger bandgap of SiC (3 times than that of Si), higher critical field strength (10 time than that of Si) along with higher thermal conductivity of SiC (3 times than that of Si) besides superior transport of carriers (2 times higher saturation velocity than that of Si). While high power SiC devices still going through infancy phase of their technological development, low power SiC modules in the voltage range 1.2 – 1.7 kV (100 – 300 A) are now visible in the commercial market. This talk will address the experimental performance through static and dynamic measurements of current SiC based high power modules in the voltage range from 1.2 – 1.7 kV. For very high voltage applications (beyond 10 kV), performance expectation from the point of view of energy losses, and system compactness will be addressed for energy transmission and distribution networks based on the developed models for SiC devices. For power converter design, developed PSpice type compact models for SiC MOSFETs will be presented.

Abstract: 
This paper offer a study and comparison of IV and III-V Schottky barrier MOSFETs (SB-MOSFETs) using an universal analytical model and Synopsys TCAD Sentaurus. Several key parameters of the device performance have been identified, e.g. the Schottky barrier height, the bandgap, the material dependend carrier masses, and density-of-states affecting the ambipolar behavior and on-current. The study shows that the above listed parameters determines the bottleneck on the device performance. The performance investigation, allows for formulating some aims and general rules. It should be the aim to have a large bandgap EG material to keep the leakage current Ioff low and a low Schottky barrier height phi_Bn. Furthermore, small masses, large Richardson constant and large density-of-states to archieve the best performance for the on-current should be targeted. In general, a low barrier height phi_Bn results in a better Ion/Ioff ratio. This results from a lower ambipolar behavior, caused by the holes which influence the Ioff current. Finally, the lower the phi_Bn, the higher the Ion/Ioff ratio and the lower the phi_Bn, the better the slope. However, more parameters, including e.g. a threshold voltage, have to be taken into account for optimization of the Schottky barrier devices.

Abstract: 
TBD