Arbeitskreis
MOS-Modelle
und
Parameterextraktion MOS Modeling and Parameter Extraction Working Group MOS-AK/GSA ESSDERC/ESSCIRC Workshop Sept. 16, 2011 Helsinki |
Technical MOS-AK/GSA Program Promoters |
The MOSIS Services |
MOS-AK Workshop Program |
Venue: | Finlandia
Hall in Helsinki, Finland |
08:30 | MOS-AK/GSA Workshop Opening: Wladek Grabinski, GMC Suisse |
08:35 | ITRS
perspective on the compact model developments Herve Jaouen, STM (F); Bert Huizing, NXP (NL); Juergen Lorenz, Fraunhofer (D) |
09:00 | SiC Technology Research and Modeling Victor Luchinin, Uni. St.Petersburg, ETU "LETI" (RU) |
09:30 | MOS-AK/GSA Poster Session |
10:00 | Coffee Break |
10:30 | Panel
"40th Anniversary of SPICE" Semiconductor Device Models - A Key Ingredient of SPICE for 40 Years Andrei Vladimirescu, BWRC, UC Berkeley and ISEP, Institut d'Electronique de Paris |
11:00 | Panel Discussion; (panelists alphabetic list) |
Christian Enz, EPFL, CH Chenming Hu, UC Berkeley, USA Paolo Nenzi, ngspice, Uni Roma, I Willy Sansen, ESAT-MICAS, B (moderator) Ehrenfried Seebacher, austriamicrosystems, A Andrei Vladimirescu, BWRC, UC Berkeley, USA |
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BSIM-EKV Collaboration Announcement |
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12:00 | Lunch Break |
13:30 | Modeling
of HV Transistors with HiSIM_HV, Benchmarks and new developments
Ehrenfried Seebacher, AMS (A); Mitiko Miura-Mattausch and Hans Juergen Mattausch, Uni. Hiroshima (J) |
14:00 | Modeling flow and model
improvement for I3T ON Semiconductor technologies Petr Betak, Petr Zavrel, Lenka Sochova, Jan Plojhar, OnSemi (CZ) |
14:30 | Coffee Break |
15:00 | A
physics based analytical 2DEG charge density and drain current model
for AlGaN/GaN HEMT devices S. Khandelwal and T. A. Fjeldly; Norwegian University of Science and Technology, (N) |
15:30 | Macro Model for
Drift/Diffusion Effects in Short-Channel Undoped Schottky Barrier
DG-MOSFETs; Mike Schwarz*,**, Thomas Holtij*,**, Alexander Kloes*, and Benjamín Iñíguez** *Technische Hochschule Mittelhessen (D), **Universitat Rovira i Virgili (E) |
16:00 | A cumulative distribution
function-based method for yield optimization of CMOS ICs; Marat Yakupov and Daniel Tomaszewski, ITE Warsaw (PL) |
16:30 | End of the MOS-AK Workshop |
Committee: | Extended
MOS-AK/GSA
Committee:
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