Arbeitskreis Modellierung von Systemen und Parameterextraktion
Modeling of Systems and Parameter Extraction Working Group
18th MOS-AK ESSDERC/ESSCIRC Workshop
Grenoble, Sept. 6, 2021
Calendar
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Mission
Committee
MOS-AK: Enabling Compact Modeling R&D Exchange
MOS-AK Technical Program Promoters
leti
Local Host
STM
Local Host
Ascent
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Sistema_Congressi
Technical Program Promoter
ESSXXRC
Technical Program Promoter
SSE
Publication Partner
YouSPICE
Final MOS-AK Workshop Program
 
Important Date:
  • Call for Papers - April 2021
  • 2nd Announcement - June 2021
  • Final Workshop Program - Aug 2021
  • MOS-AK Workshop - Sept.6, 2021
    as Virtual Educational Event at ESSDERC/ESSCIRC
Venue:
Online MOS-AK Webinar;
use online form below to register
Online Registration is open
any related enquiries can be sent to registration@mos-ak.org
Agenda 
Display Format: Citation Citation & Abstract
T_0  MOS-AK Intro
W.Grabinski; MOS-AK (EU)
9:00-11:00CET MOS-AK Morning Session (1)
Chair: TBA
T_1  ASCENT+: Free of charge access to advanced nanoelectronics infrastructure
Nicolas Cordero and Paul Roseingrave
ASCENT+ Access Interface Team, Tyndall National Institute, Cork T12R5CP (IE)
T_2  TCAD Simulation of Novel Semiconductor Devices with Nano-Electronic Simulation Software (NESS): a flexible nano-device simulation platform.
Tapas Dutta, Cristina Medina-Bailon, Ali Rezaei, Daniel Nagy, Fikru Adamu-Lema,Nikolas Xeni, Yassine Abourrig, Naveen Kumar, Asen Asenov and Vihar P. Gergiev
University of Glasgow (UK)
T_3  TCAD as a tool for the interpretation of Terahertz Rectification in MOS-FET
Ivan Mazzetta*, Stefano Perticaroli**, Fabrizio Palma*
*Sapienza Universita  di Roma DIET-SBAI (I), **Radio Analog Micro Electronics srl (I)
T_4  Improvement of IGBT model to integrate into a circuit simulation program
Sergey Kokin, Sergey Malkov, Evgeniy Osipov, Denis Perminov
Integrated Solutions LLC (RU)
11:00-13:00CET MOS-AK Morning Session (2)
Chair: TBA
T_5  Compact Modeling for the Drain Current of an Extrinsic Organic Field-Effect Transistor Based on an Improved Smoothing Function
Valentin Turin*, Badurdin Rakhmatov**, Roman Shkarlat***, Gennady Zebrev4, Sergey Makarov5, Sergey Kokin5, Chang-Hyun Kim6, Benjamin Iniguez7 and M S Shur8
*Orel State University named after I.S. Turgenev (RU), **Tajik National University (TJ), ***Bolkhov Plant of Semiconductor Devices JSC (RU), 4National Research Nuclear University MEPhl (RU), 5Integrated Solutions LLC (RU), 6Gachon University (KR), 7Rovira i Virgili University (ES), 8Rensselaer Polytechnic Institute (USA)
T_6  PSP103.8 MOSFET model : improvement of the charge model for short channel transistors
O. Rozeau*, S. Martinie*, G.-.J. Smit**, A. Scholten**, N. Derrier***, A. Juge***, P. Scheer*** and T. Poiroux*
*CEA-Leti(F), **NXP(NL), ***STMicroelectronics(F)
T_7  Characteristics of a Junctionless Nanowire Transistor
George Angelov
Technical University of Sofia (BG)
T_8  Analytical Modeling of Double Channel GaN HEMTs
Sheikh Aamir Ahsan
National Institute of Technology Srinagar (IN)
14:00-16:00CET MOS-AK Afternoon Session (1)
Chair: TBA
T_9  Development of GaN-based devices for high power and high frequency electronics
Andrzej Taube*, Anna Szerling*, Maciej Kaminski*, **, Marek Ekielski*, Jaroslaw Tarenko*, Karolina Pagowska*, Maciej Kozubal*, Kamil Kosiel*, Renata Kruszka*, Krystyna Golaszewska-Malec*, Ernest Brzozowski*
*Lukasiewicz Research Network-Institute of Microelectronics and Photonics, **Warsaw University of Technology, Institute of Microelectronics and Optoelectronics (PL)
T_10  The Vital Role of Machine Learning in Developing Advanced and Emerging Technologies
Hussam Amrouch
University of Stuttgart (D)
T_11  Semiconductor devices variability: modelling, characterization and data management
Natalia Seoane, Julian G. Fernandez, Enrique Comesana and Antonio Garcia-Loureiro
University of Santiago de Compostela (SP)
T_12  The Development of Ferroelectric Capacitor Compact Model
M.M. Gourary, A.E. Rassadin, S.G. Rusakov, S.L. Ulyanov
Institute for Design Problems in Microelectronics of RAS (IPPM RAS) (RU)
16:00-18:00CET MOS-AK Afternoon Session (2)
Chair: TBA
T_13  Compact Modelling of FDSOI Transistors Down to Cryogenic Temperatures
Aouad Mohamed, Thierry Poiroux, Sebastien Martinie, Gerard Ghibaudo
CEA, LETI (F)
T_14  Flexible Analog Circuits based on Oxide Thin-Film Transistors: from Modelling to Applications
Luisa Petti, Niko Munzenrieder, and Giuseppe Cantarella
Free University of Bozen-Bolzano (IT)
T_15  Democratizing IC Design: The SSCS PICO Program
Boris Murmann
Stanford University (US)
T_16  Data Management in Ubiquitous Electronics
Muhammad Mustafa Hussain
UC Berkeley (US)
End
of the MOS-AK/Grenoble Workshop
International MOS-AK Compact Modeling Committee

IEEE Membership
International R&D Advisory Board

Larry Nagel, Omega Enterprises Consulting (USA)
Fellow Member
Andrei Vladimirescu, UCB (USA); ISEP (FR)
Fellow Member
MOS-AK Compact Modeling TPC Chair

Wladek Grabinski, MOS-AK (EU)
Senior Member
North America TPC:  
Pekka Ojala, Exar Corporation (USA)
Geoffrey Coram, Analog Devices (USA) Senior Member
Jamal Deen, U.McMaster (CAN)
Fellow Member
Roberto Tinti, Keysight EEsof Division (USA)

open

South America TPC:

Gilson I Wirth, UFRGS (BR)
Senior Memner
Sergio Bampi, UFRGS (BR)
Member
Antonio Cerdeira Altuzarra, Cinvestav-IPN (MX)
Senior Member
Roberto S. Murphy, INAOE (MX) Senior Member
open
Europe TPC:
Ehrenfried Seebacher, ams AG (A) .
Sanjay Mane, XFab, (D)
Thomas Gneiting, AdMOS (D)
Benjamin Iniguez, URV (SP) Fellow Member
Daniel Tomaszewski, IMiF Warsaw (PL) Senior Member
Asia/Pacific TPC:
Sadayuki Yoshitomi, Kioxia (J) Member
Min Zhang, XMOD, Shanghai (CN)
Kaikai Xu, UESTC Chengdu (CN) Senior Member
open
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No.#1127
update: July.2021  (Rev. f)
Contents subject to change (C)1999-2021 All rights reserved. WG