MOS Modeling and Parameter Extraction Group Meeting 26 November 1999, Dresden, Germany |
Calendar |
Open
Directory |
Books |
Mission |
Committee |
AGENDA |
10:00 | G.Moucha | Welcome and Meeting
Agenda Brief introduction to ZMD in Sachsenring AG |
10:15 | W.Grabinski | The EPFL-EKV MOSFET
Model and RF
Application Introduction to Smart Silicon Systems in Lausanne |
10:45 | M.Vorwerk | Investigation of the Scalable RF MOS Models |
11:45 | G.Woysch | Interconnect Modeling |
12:30 | Lunch | |
13:30 | T.Gneiting | Modeling of 0.25um Fully Depleted SOI Process |
14:15 | J.Fellner | Measurements and Extraction of 1/f Noise Parameters for MOS Transistors |
15:00 | Final discussion and organization issues |
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