Arbeitskreis Modellierung von Systemen und
Parameterextraktion Modeling of Systems and Parameter Extraction Working Group MOS-AK Workshop at LAEDC Escazu, Costa Rica, February 25, 2020 |
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Final MOS-AK Program |
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Venue: |
Holiday Inn Hotel, Escazu, west of San José, Costa Rica | |||||
Online | Registration any related enquiries can be sent to registration@mos-ak.org |
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Agenda |
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14:00-18:00 | MOS-AK Workshop at LAEDC | |||||
T_0
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MOS-AK Intoduction Benjamin Iniguez and Wladek Grabinski URV, DEEEA, Tarragona, (SP) and MOS-AK (EU) |
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T_1 |
Influence of Substrate Bias on the Mobility of Nanowire MOSFETs Marcelo Antonio Pavanello Centro Universitario FEI (BR) |
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T_2 |
Analytical Current-Voltage Model for Double Gate a-IGZO TFTs with Symmetric Structure Y. Hernández-Barrios, A. Cerdeira, M. Estrada, B. Iñíguez CINVESTAV, (MX) and URV, DEEEA, Tarragona, (SP) |
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T_3 |
Approaches for Analytical (Compact) Modeling of Tunneling Currents in MOS Transistors Alexander Kloes THM, NanoP, Giessen (D) |
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15:50-16-20 | Coffee Break | |||||
T_4 |
Modeling the Junctionless Ion Sensitive Field Effect Transistor Jean-Michel Sallese, Ashkhen Yesayan* and Farzan Jazaeri EPFL (CH), *IRPHE (AR) |
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T_5 |
The area scaling of charge trap induced time-dependent variability Gilson Wirth UFRGS, Porto Alegre (BR) |
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T_6 |
Characterization and modeling of 1/f noise in organic and IGZO TFTs Benjamin Iñiguez*, Wondwosen E. Muhea*, Thomas Gneiting** and Gérard Ghibaudo*** URV, DEEEA, Tarragona, (SP), **AdMOS (D) ***IMEP-LAHC, INPG - Minatec (F) |
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18:00 | End of MOS-AK Workshop | |||||
International MOS-AK Committee: | ||||||
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