Arbeitskreis
MOS-Modelle und Parameterextraktion MOS Modeling and Parameter Extraction Working Group 10th MOS-AK/GSA ESSDERC ESSCIRC Workshop Sept. 21, 2012 Bordeaux |
MOS-AK/GSA Program Sponsors |
Prime Sponsor: |
Industiral |
Sponsors: | |
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Technical
Program Sponsor |
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![]() ![]() French Branch |
Technical MOS-AK/GSA Program Promoters |
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![]() The MOSIS Services |
MOS-AK/GSA Poster Session Program |
Venue: | “Palais
des Congrès” – Bordeaux Lac, allée Louis Ratabou, 33000 Bordeaux (F) |
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Important Dates: |
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Poster Session |
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P_1 | Analytical Calculation of Surface-potential
in AlGaAs/GaAs and AlGaN/GaN HEMT Devices Sourabh Khandelwal and Tor A. Fjeldly Norwegian University of Science and Technology (N) |
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P_ 2 |
Analytical Two-Dimensional Model for
Source/Drain Band-to-Band Tunneling in Silicon Double-Gate
Tunnel-MOSFETs Michael Graef, Mike Schwarz, Thomas Holtij, Franziska Hain, and Alexander Kloes THM (D) |
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P_ 3 |
Gate-Level Modeling for CMOS Circuit Simulation with Ultimate FinFETs Nicolas Chevillon, Morgan Madec and Christophe Lallement InESS / Université de Strasbourg (F) |
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Committee: | Extended MOS-AK/GSA Committee |
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