MOS-AK Workshop
Arbeitskreis MOS-Modelle und Parameterextraktion
MOS Modeling and Parameter Extraction Group
Boeblingen, March 24, 2006 
  • Morning Session
  • 9:00-12:00 Oral presentations
  • 10:20-10:30 (coffee break)
  • 10:40-11:30 Posters
  • 11:30-12:30 HV/LD MOS Panel
  • 12:30-14:00 (lunch)
  • Afternoon Session
  • 14:00-17:00 Oral presentations
  • 15:00-15:20 (coffee break)


Workshop Program
Display Format: Citation Citation & Abstract
9:00-10:20 Morning Session
  Compact Modelling of LDMOS Devices
A.C.T. Aarts, R. van der Hout*, R. van Langevelde*, A.J. Scholten*, M.B. Willemsen* and D.B.M. Klaassen*;
Eindhoven University of Technology, *Philips Research Laboratories Eindhoven
  An electro-thermal DMOS model validated on pulsed measurements
Bart Desoete; AMI Semiconductor, Belgium
  Robust Design of Smart Power Circuits - The Robuspic Project
Christian Maier; Robert Bosch GmbH
10:40-11:30 Poster Session
  PSP Modeling Package in IC-CAP
Thomas Gneiting; AdMOS GmbH Advanced Modeling Solutions
  Thermal and Electrical Simulation of Smart Power Circuits by Network Analysis
J. Teichmann, G. Täschner, F. Liebermann, W. Kraus, and C. Wallner, Atmel, Germany
  New enhancements in ADMS and Spectre CMI XML scripts
Sergey Sukharev; Cadence, Moscow
  Parasitics Modeling in a 0.35um HV-Process
A.Steinmair and E.Seebacher; austriamicrosystems AG, Austria
  Optimizing Scribe Street RF Parameter Measurements
Leonard Hayden, Cascade Microtech Inc, Beaverton, Oregon, USA
Presenter: Anthony Lord
  Ansoft Solutions for High Performance IC Design Capabilities and Performance
Mary Tolikas, Alain Michel; Ansoft Corporation
  UTMOST Modeling Software: HVMOS and LDMOS
Chris Warwick; Silvaco
  Transistor models without certification ... is it worthwhile?
Erik Buelens and Marc Vanden Bossche; NMDG, Belgium
11:30-12:30 HV/LD MOS Panel Session
  HV/LD MOS Modeling: Status and Future Directions
Moderators: Ehrenfried Seebacher and Marek Brzobohaty
14:00-16:00 Afternoon Session
  Modeling and analysis of RF LDMOS devices for reliability issues
M. Gares1, M. A. Belaid1, H. Maanane1, M. Masmoudi1, J. Marcon1, K. Mourgues1, Ph. Eudeline2
1Rouen University (LEMI), France; 2THALES Air Defence, France
  MOS Transistor Mismatch Modeling in a 0.35um HV-Process
W. Posch and E.Seebacher; austriamicrosystems AG, Austria
  Lumped element behavioural high voltage MOS model
S.Schmidt; X-FAB
  Extraction of a Scalable Electrical Model for a SOI RF-LDMOS Including Drain Drift Region Resistance Self-Heating Effects
Lorenzo Labate, Roberto Stella, Paolo Villani, and Enrico Novarini; STMicroelectronics, Italy
  Compact IGBT Modelling for System Simulation
P.A. Mawby, A.T. Bryant, Univ. Warwick
16:00 End of the workshop
No.# 23306
update: 2-APR-06
Contents subject to change ©1999-2006 All rights reserved. WG