Arbeitskreis Modellierung von Systemen und Parameterextraktion 
Modeling of Systems and Parameter Extraction Working Group
1st Sino MOS-AK Workshop
Shanghai June 26-28 2016
MOS-AK: Enabling Compact Modeling R&D Exchange
Calendar
Open Directory
Books
Mission
Committee
Sponsors and Technical MOS-AK Program Promoters
Keysight
Lead Sponsor
 PDA
 
SIMTAC  
GBIT
SIMIT
SKLFMI
SwissNext China
NEEDS
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Eurotraining
IJHSES
Publishing Partner
Technical Program of the International MOS-AK Workshop
Important Dates:
  • Call for Papers - March. 2016
  • 2nd Announcement - April 2016
  • Final Workshop Program - May 2016
  • International MOS-AK Workshop:
Venu:
SIMIT/SIMTAC
Floor 3, building 5, NO.865 Chang Ning Road
Shanghai (CN)

Agenda and Workshop Topics
JUNE 26 MOS-AK Tutorial Day
08:30-09:20 Workshop Check in
Floor 3, building 5, NO.865 Chang Ning Road, Shanghai
09:30-11:30 From DC to RF measurements/characterization/modeling - DC, CV part
Franz Sischka,
Author of IC-CAP Modeling Handbook
Sisconsult (D)
11:30-13:00 Lunch
13:00-14:30 From DC to RF measurements/characterization/modeling - RF part
Mostafa Emam
Incize (B)
14:30-15:00 Tea Break
15:00-16:30 Noise measurement and modeling
Paulius Sakalas
Institut fur Elektrotechnik und Elektronik (
IEE), Technische Universitat Dresden (D)
JUNE 27 First MOS-AK Workshop Day
08:30-09:20 Workshop Check in
Floor 3, building 5, NO.865 Chang Ning Road, Shanghai
09:30-09:35 Opening Speech
Xi Wang
Shanghai Institute of Microsystem and Information Technology (SIMIT), (CN)
09:35-09:40 Why MOS-AK Shanghai
Min Zhang; Shanghai International Micro-Tech Affiliation Center (SIMTAC)
Wladek Grabinski; MOS-AK Association (EU)
09:40-10:25 FOSS Compact Model Verilog-A standardization (Invited)
Wladek Grabinski
MOS-AK Association (EU)
10:25-10:50 Modeling and Optimization of MOSFET unit cell for power application
Yan Wang
QingHua University
, (CN)
10:50-11:10 Tea Break
11:10-11:35 ASM-HEMT Model for RF and Power Electronic Applications Overview and Extraction
Long Ma
Keysight Technologies (USA)
11:35-12:00 Physics-Based Modeling for TID Effects
Chen Shen
Cogenda Co Ltd (Suzhou)
12:00-12:10 Group Photo
12:10-13:30 Lunch
13:30-14:15 Modeling issue related to ReRAM and Junctionless FETs (Invited)
Zhiping Yu
QingHua University
, (CN)  
14:15-14:40 Behavioral Model Analysis using Simultaneous Fundamental Load-pull and Source-pull Measurements
Jiangtao Su
Hangzhou Dianzi University
, (CN)
14:40-15:05 DOMINO-A European Modeling Initiative for Organic and Oxide TFT
Thomas Gneiting
ADMOS (D)
15:05-15:25 Tea Break
15:25-15:50 Large signal modeling of InP/InGaAs DHBT with 0.5THz fmax
Bin Niu
Nanjing Electronic Devices Institute
, (CN)
15:50-16:15 Wafer-Level Calibration & Verification up to 750 GHz
Sia Choon Beng
Cascade Microtech Inc. (USA)
16:15-16:40 The failure mode and aging model of GaAs devices
Tianshu Zhou
HiSilicon
, (CN)
17:00-19:00 Gala Dinner
JUNE 28 Second MOS-AK Workshop Day
08:30-09:20 Workshop Check in
"Floor 3, building 5, NO.865 Chang Ning Road, Shanghai"
09:30-10:15 CMOS Reliability: from Device Physics to Circuit Aging Simulations_Invited_
Lining Zhang
Hong Kong University of Science and Technology (HKUST), (HK)
10:15-10:40 Model of power InAlN/GaN HEMT for 3-D Electrothermal Simulations
Ales Chvala
Slovak University of Technology in Bratislava (SK)
10:40-11:00 Tea Break
11:00-11:25 Direct Extend PSP for RF SOI Largesignal Modeling: Model and Verification
Liu Jun
Hangzhou Dianzi University
, (CN)
11:25-11:50 Large Signal Equivalent Circuit Modeling of AlGaN/GaN HEMTs
Haiyan Lu
Nanjing Electronic Devices Institute
, (CN)
12:00-13:30 Lunch
13:30-14:15 Understanding RF CMOS compact modeling to allow accurate RF circuit design_Invited_
Bertrand Ardouin
XMOD Technologies (F)
14:15-14:40 Surface-potential compact model for amorphous-IGZO thin-film transistors
Ling LI
Institute of Microelectronics of Chinese Academy of Sciences
, (CN)
14:40-15:05 Gate Delay Model in Logic Circuit under NBTI Effect
Haixia Guo
East China Normal University
, (CN)
15:05-15:25 Tea Break
15:25-15:50 Nonlinear Modeling of Terahertz InP HEMTs Hebei Semiconductor Research Institute
Guangwei Du
Hebei Semiconductor Research Institute
, (CN)
15:50-16:15 Noise Characterization, Modeling and Its Impact on Highly Scaled Designs from 0.1 Hz to MMW
Yanfeng Li
Platform Design Automation, Inc.
(CN)
16:15-16:40 Research progress of SOI devices and modeling in SIMIT
Jing Chen
Shanghai Institute of Microsystem and Information Technology (SIMIT)
, (CN)
16:40-16:50 Closing Speech
Teng Gao
Shanghai International Micro-Tech Affiliation Center (SIMTAC)
, (CN)
17:00
End of International MOS-AK Workshop in Shanghai



Extended MOS-AK Committee:
Committee
  • MOS-AK Honorary Committee
    • Tzu-Yin Chiu, SMIC
    • Ming-Kai Tsai, MediaTek SRC/CMC Chair
  • MOS-AK Shanghai Organzation Committee
    • Min Zhang, SIMTAC (Shanghai)
    • Wladek Grabinski, MOS-AK (EU)
  • International MOS-AK Board of R&D Advisers
    • George Ponchak, T-MTT Editor (USA)
    • Lingling Sun, Hangzhou Dianzi University (CN)
    • Yuhua Cheng, PKU (CN)
    • Larry Nagel, Omega Enterprises Consulting (USA)
    • Andrei Vladimirescu, UCB (USA); ISEP (FR)
  • Technical Committee
    MOS-AK/GSA North America
  • Chair: Pekka Ojala, Exar Corporation
  • Co-Chair: Geoffrey Coram, Analog Devices
  • Co-Chair: Prof. Jamal Deen, U.McMaster
  • Co-Chair: Roberto Tinti, Keysight EEsof Division
    MOS-AK/GSA South America
  • Chair: Prof. Gilson I Wirth; UFRGS; Brazil
  • Co-Chair: Prof. Carlos Galup-Montoro, UFSC; Brazil
  • Co-Chair: Sergio Bampi, UFRGS, Brazil
  • Co-Chair: Antonio Cerdeira Altuzarra, Cinvestav - IPN, Mexico
    MOS-AK/GSA Europe
  • Chair: Ehrenfried Seebacher, AMS, Austria
  • Co-Chair: Alexander Petr, XFab, Germany
  • Co-Chair: Prof. Benjamin Iniguez, URV, Spain
  • Co-Chair: Franz Sischka, SisConsult, Germany
    MOS-AK/GSA Asia/South Pacific

  • Chair: Sadayuki Yoshitomi, Toshiba
  • Co-Chair: Min Zhang, XMOD Technologies, Shanghai 
  • Co-Chair: Xing Zhou, NTU Singapore   
  • Co-Chair: A.B. Bhattacharyya, JIIT New Delhi
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update: Aug.2016 (rev. a)
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