Arbeitskreis Modellierung von Systemen und Parameterextraktion 
Modeling of Systems and Parameter Extraction Working Group
September 11, 2017  Leuven
Open Directory
MOS-AK: Enabling Compact Modeling R&D Exchange
  MOS-AK Sponsor and Technical Program Promoters
powered by
Publishing Partner
Prennouncement and Call for Papers 
Important Dates:
  • Preannouncement - Dec 2016
  • Call for Papers - March. 2017
  • Final Workshop Program - July. 2017
  • MOS-AK Workshop - Sept.11, 2017
Venue: Leuven
Registration: free on-line registration to be open in July 2017
   Synopsis and Workshop Topics
  • HiTech forum to discuss the frontiers of electron device modeling with emphasis on simulation-aware models.
  • MOS-AK Meetings are organized with aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/Spice modeling and Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and CAD tool vendors. The topics cover all important aspects of compact model development, implementation, deployment and standardization within the main theme - frontiers of the compact modeling for nm-scale MEMS designs and CMOS/SOI circuit simulation.
  • The specific workshop goal will be to classify the most important directions for the future development of the electron device models, not limiting the discussion to compact models, but including physical, analytical and numerical models, to clearly identify areas that need further research and possible contact points between the different modeling domains. This workshop is designed for device process engineers (CMOS, SOI, BiCMOS, SiGe) who are interested in device modeling; ICs designers (RF/Analog/Mixed-Signal/SoC) and those starting in that area as well as device characterization, modeling and parameter extraction engineers. The content will be beneficial for anyone who needs to learn what is really behind the IC simulation in modern device models.
Topics: to be covered include the following:
  • Advances in semiconductor technologies and processing
  • Compact Modeling (CM) of the electron devices
  • Verilog-A language for CM standardization
  • New CM techniques and extraction software
  • FOSS TCAD/EDA modeling and simulation
  • CM of passive, active, sensors and actuators
  • Emerging Devices, CMOS and SOI-based memory cells
  • Organic, Bio/Med devices/technology modeling
  • Microwave, RF device modeling, HV/Power device modeling
  • Nanoscale CMOS devices and circuits
  • Technology R&D, DFY, DFT and IC Designs
  • Foundry/Fabless Interface Strategies
On-line abstract submission to be open in March 2017


Extended MOS-AK Committee:
  • International MOS-AK Board of R&D Advisers
    • Larry Nagel, Omega Enterprises Consulting (US)
    • Andrei Vladimirescu, UCB (US); ISEP (FR)
  • MOS-AK Workshop Manager
    • Wladek Grabinski, MOS-AK (EU)
  • MOS-AK Technical Committee
    MOS-AK North America
  • Chair: Pekka Ojala, Exar Corporation (US)
  • Co-Chair: Geoffrey Coram, Analog Devices (US)
  • Co-Chair: Jamal Deen, U.McMaster (CA)
  • Co-Chair: Roberto Tinti, Keysight EEsof Division (US)
    MOS-AK South America
  • Chair: Gilson I Wirth; UFRGS; (BR)
  • Co-Chair: Carlos Galup-Montoro, UFSC; (BR)
  • Co-Chair: Sergio Bampi, UFRGS, (BR)
  • Co-Chair: Antonio Cerdeira Altuzarra, Cinvestav - IPN, (MX)
    MOS-AK Europe
  • Chair: Ehrenfried Seebacher, ams AG, (A)
  • Co-Chair: Alexander Petr, XFab, (D)
  • Co-Chair: Benjamin Iniguez, URV, (SP)
  • Co-Chair: Franz Sischka, SisConsult, (D)
    MOS-AK Asia/South Pacific

  • Chair: Sadayuki Yoshitomi, Toshiba (J)
  • Co-Chair: Min Zhang, XMOD Shanghai, (CN)
  • Co-Chair: Xing Zhou, NTU Singapore (SG)  
  • Co-Chair: A.B. Bhattacharyya, JIIT New Delhi (IN)
update: Dec. 2016 (rev. C)
Contents subject to change ©1999-2016 All rights reserved. WG
Graphics © 2016 Oliver