Arbeitskreis MOS-Modelle und Parameterextraktion
MOS Modeling and Parameter Extraction Working Group
10th MOS-AK/GSA ESSDERC ESSCIRC Workshop
Sept. 21, 2012 Bordeaux
MOS-AK: Over Two Decades of Enabling Compact Modeling R&D Exchange
MOS-AK/GSA Program Sponsors
Prime Sponsor:
Industiral
Sponsors:
 
Agilent Technologies LFoundry
CSEM
ST
AMS
Technical Program Sponsor
IEEE France EDS Frnace
French Branch
  Technical MOS-AK/GSA Program Promoters
GSA COMON EC Project EuroTraining MOSIS
The MOSIS Services
MOS-AK/GSA Poster Session Program
Venue: “Palais des Congrès” – Bordeaux Lac, allée Louis Ratabou, 33000 Bordeaux (F)
Important Dates:
  • Preannouncement - April 2012
  • Call for Papers - May 2012
  • 2nd Announcement - June 2012
  • Final Workshop Program - Aug. 2012
  • 10th MOS-AK/GSA ESSDERC/ESSCIRC Workshop - Sept. 21, 2012
    • Morning Session
    • Panel Discussion: "Status and Next Decade of European Compact Modeling"
    • Poster Session
    • Afternoon Session
   
Display Format: Citation Citation & Abstract
 
Poster Session
P_1  Analytical Calculation of Surface-potential in AlGaAs/GaAs and AlGaN/GaN HEMT Devices
Sourabh Khandelwal and Tor A. Fjeldly
Norwegian University of Science and Technology (N)
P_ 2
Analytical Two-Dimensional Model for Source/Drain Band-to-Band Tunneling in Silicon Double-Gate Tunnel-MOSFETs
Michael Graef, Mike Schwarz, Thomas Holtij, Franziska Hain, and Alexander Kloes
THM (D)
P_ 3
Gate-Level Modeling for CMOS Circuit Simulation with Ultimate FinFETs
Nicolas Chevillon, Morgan Madec and Christophe Lallement
InESS / Université de Strasbourg (F)
 
 
Committee: Extended MOS-AK/GSA Committee
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update: Sept. 2012 (rev. a)
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